Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics/International Quantum Electronics Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2004),
  • paper CTuJ7

Selective quantum well intermixing of 1.22 and 1.55µm GaInNAs laser material

Not Accessible

Your library or personal account may give you access

Abstract

Selective quantum well intermixing in 1.22 and 1.55µm GaInNAs/GaAs laser structures using a sputtered silica cap deposition process is reported. Controlled wavelength shifts of 60 and 93nm were obtained in 1.22 and 1.55µm material respectively.

© 2004 Optical Society of America

PDF Article
More Like This
First Demonstration of Tensile Strained GaInNAs/InP Multi-Quantum-Well TM Laser Emitting at 1.55 μm

B. Dagens, F. Alexandre, F. Martin, A. Accard, O. Drisse, E. Derouin, R. Brenot, D. Make, F. Pommereau, F. Poing, O. Le Gouezigo, and J.-L. Gentner
CTuX3 Conference on Lasers and Electro-Optics (CLEO:S&I) 2006

Monolithic integration of InGaAs-InAlGaAs optoelectronic devices for 1.55µm emission by quantum well intermixing

O. P. Kowalski, S. D. McDougall, J. H. Marsh, A. C. Bryce, and C. N. Ironside
CWG3 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 1998

Wavelength Tunable Selectively Intermixed Quantum Well Laser

Abdullah J. Zakariya and Patrick LiKamWa
JTh2A.110 CLEO: QELS_Fundamental Science (CLEO:FS) 2013

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.