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Conferences > CLEO > 2008 > CTuZ > CTuZ1
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • OSA Technical Digest (CD) (Optica Publishing Group, 2008),
  • paper CTuZ1

Room Temperature Operated 3.1-µm Type-I GaSb-based Diode Lasers with 80mW Continuous Wave Output Power

L. Shterengas, G. Kipshidze, T. Hosoda, D. Donetsky, and G. Belenky

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Abstract

High-power diode lasers with heavily-strained In(Al)GaAsSb type-I quantum-well active region emitting at 3.1µm at room temperature are reported. Devices operate in continuous-wave regime with output power above 200mW and 80mW at 250K and 285K, correspondingly.

© 2008 Optical Society of America

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