Abstract
GaSb-based type-I quantum-well diode lasers with two-cascade active region were designed and fabricated. The injection is achieved by means of tunnel junction between AlGaAsSb graded composition and InAs/AlSb chirped superlattice layers. The devices operate in continuous wave regime at room temperature and demonstrate twofold improvement of injection efficiency as compared to reference single cascade lasers.
© 2013 Optical Society of America
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