Abstract

The impurity induced disordering (IID) technique provides an efficient way to realize waveguiding structure in optoelectronic integrated circuits.¹ The masked implantation process produces a modification of the quantum well (QW) material which in turn modifies its refractive index.² This creates a refractive index step between the implanted and nonimplanted regions and produces lateral confinement for photons in the lateral dimension, thus a 2-D waveguide is formed. Although there have been a lot of effort spent in studying the electronic and optical properties of the IID modified AlGaAs/GaAs QW structures, the detailed waveguiding properties of this type of devices is still not known. A detail model is considered here on the two dimensional IID waveguide structure and results indicate guiding requirements on the structure's dimension, effects on the optical confinement factor, and the wavelength requirement for single mode propagation.

© 1995 IEEE