Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Phase Modulation in Impurity-Induced-Disordered AlGaAs/GaAs Quantum-Well and Double-Heterostructure Waveguides

Not Accessible

Your library or personal account may give you access

Abstract

Recently, there has been considerable interest in the use of quantum-well disordering techniques to form waveguides and devices in AlGaAs/GaAs wafers without the need for precise etching or complex crystal reqrowth techniques [1-4]. Such a technology should be particularly useful in the development of optoelectronic integrated circuits for optical signal processing and communication applications.

© 1988 Optical Society of America

PDF Article
More Like This
Impurity induced disordering produced lateral optical confinement in AlGaAs/GaAs quantum well waveguides

E. Herbert Li, Chun-Bong Cheung, and Wai-Kin Tsui
P70 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 1995

Low-Drive-Voltage GaAs/AIGaAs Quantum Well Waveguide Phase Modulators

J. E. Zucker, T. L. Hendrickson, and C. Burrus
MA2 Integrated and Guided Wave Optics (IGWO) 1988

Temperature Dependence in GaAs/AlGaAs Multiple Quantum Well Waveguides

Y. J. Chen and G. J. Sonek
MA5 Integrated and Guided Wave Optics (IGWO) 1988

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.