Abstract

Optical or optoelectronic integrated circuits need small lasers with low power consumption. Many attempts have been made to fabricate micro lasers by processing grown structures with chemical-etching or dry-etching techniques.^1,2 Another promising method is selective epitaxy on masked substrates by metalorganic chemical vapor deposition (MOCVD). In selective growth on a (111)B GaAs substrate, three-dimensional structures, such as rectangular, tetrahedral and hexagonal prism shapes, can be grown by changing the growth conditions and/or mask patterns.^3,4 In this paper, we report on the fabrication and the lasing characteristics of new micro-laser structures based on control of the facet shapes.

© 1995 IEEE