Abstract
For the purpose of integrating optical devices with conventional high-speed Si electronic devices, we proposed using the novel material of GaNAs for laser diodes (LDs) formed on Si wafers.1 As GaNAs can be lattice-matched to Si, a drastic reduction in dislocation density is expected. However, early experiments1,2 indicate that GaN0.19As0.81, lattice-matched to Si, might have a negative bandgap, as shown in Fig. 1. In this case, it will become a metal rather than a semiconductor. Thus, GaN0.19As0.81 cannot be used as a light emitting material. To overcome this problem, we proposed a GaNAs/GaNP strained-layer quantum well for the active layer of LDs formed on Si wafers.3 When the lattice constant of GaNAs is slightly larger than that of Si, a positive bandgap results. In this case, a large bandgap difference between GaNAs and GaNP can be achieved. The proposal, however, was merely qualitative. In this paper, the applicability of GaNAs/GaNP LDs formed on Si wafers is quantitatively discussed.
© 1995 IEEE
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