Fabrication of SiO2 Thin Films by Laser Ablation of Silicone

Masayuki Okoshi; Masaaki Kuramatsu; Narumi Inoue

The 4th Pacific Rim Conference on Lasers and Electro-Optics
Technical Digest Series (Optica Publishing Group, 2001),
paper MB2_3

Fabrication of SiO₂ Thin Films by Laser Ablation of Silicone

Masayuki Okoshi, Masaaki Kuramatsu, and Narumi Inoue

Conference on Lasers and Electro-Optics/Pacific Rim 2001

Chiba Japan
15–19 July 2001
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Thin Film and Nano Particle Formation [Room B] (MB2)

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M. Okoshi, M. Kuramatsu, and N. Inoue, "Fabrication of SiO2 Thin Films by Laser Ablation of Silicone," in The 4th Pacific Rim Conference on Lasers and Electro-Optics, Technical Digest Series (Optica Publishing Group, 2001), paper MB2_3.

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Abstract

We deposited SiO₂ films at room temperature by 193-nm ArF laser ablation of silicone rubber in oxygen atmosphere. For fabricating SiO₂ films, we found the optimum conditions of laser fluence and oxygen gas pressure.

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