One-Step Rapid Thermal Process for Bandgap Tuned Lasers in GaAs/AlGaAs Structure

S.L. Ng; B.S. Ooi; Y.L. Lam; Y.C. Chan

The 4th Pacific Rim Conference on Lasers and Electro-Optics
Technical Digest Series (Optica Publishing Group, 2001),
paper WC3_4

One-Step Rapid Thermal Process for Bandgap Tuned Lasers in GaAs/AlGaAs Structure

S.L. Ng, B.S. Ooi, Y.L. Lam, and Y.C. Chan

Conference on Lasers and Electro-Optics/Pacific Rim 2001

Chiba Japan
15–19 July 2001
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Light Sources for DWDM Applications [Room C] (WC3)

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S. L. Ng, B. S. Ooi, Y. L. Lam, and Y. C. Chan, "One-Step Rapid Thermal Process for Bandgap Tuned Lasers in GaAs/AlGaAs Structure," in The 4th Pacific Rim Conference on Lasers and Electro-Optics, Technical Digest Series (Optica Publishing Group, 2001), paper WC3_4.

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Abstract

A quantum well intermixing technique in GaAs/AlGaAs structure is developed for band-gap tuned lasers. This technique employs a grown-in AlAs as intermixing source and an oxidized AlAs as intermixing mask by one-step rapid thermal process.

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