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Conferences > CLEOPR > 2022 > CMP11A > CMP11A_01

Temperature insensitivity of emission wavelength of highly-stacked quantum dot laser fabricated on InP(311)B substrate with Bi atoms irradiation

Kouichi Akahane, Atsushi Matsumoto, Toshimasa Umezawa, Naokatsu Yamamoto, Yoriko Tominaga, Satoshi Yanase, Tomohiro Maeda, Hideyuki Sotobayashi, and Atsushi Kanno

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Abstract

In this study, the effect of Bi irradiation during the crystal growth of quantum dot (QD) laser diodes (LD) by molecular beam epitaxy (MBE) was investigated. The QD-LDs grown with Bi irradiation exhibit a decrease in temperature dependence on the lasing wavelength.

© 2022 IEEE

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