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Conferences > CLEOPR > 2022 > CWP12B > CWP12B_02

Annealing sequence dependence of directly bonded InP/Si substrate for GaInAsP LDs on silicon platform

Liang Zhao, Motonari Sato, Kota Shibukawa, Shingo Ito, Koji Agata, and Kazuhiko Shimomura

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Abstract

We demonstrated the bonding of thin film InP and Si using wafer direct bonding technique, described the heating process of the InP-Si directly attached substrate. The evaluation of the prepared InP-Si substrate by observing the surface state with Nomarski-mode images is better than previous annealing sequence. We have successfully obtained lasing characteristics of GaInAsP MQW LD using this substrate.

© 2022 IEEE

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