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Large wavelength offset for lateral bandgap engineering by using Quantum Well Intermixing

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Abstract

Patterned SiO2 and Si3N4 thin film on top of InGaAsP-based epi-layer. Quantum well intermixing had use for lateral bandgap engineering. 85nm wavelength difference has been attained in 1550nm quantum well, showing potential for photonic integration.

© 2022 IEEE

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