Abstract

During the past 8 years, compounds of Ga_1−x Al_xAs have been the subject of intensive study for the reproducible fabrication of reliable ir emitting lasers capable of sustained cw operation at and above room temperature. Numerous types of stripe-geometry double heterojunction lasers have been proposed and demonstrated including:

(1) lasers with contact stripes isolated using an insulator such as silicon dioxide;

(2) lasers with contact stripes isolated by bounding regions of high resistivity GaAs formed by proton bombardment;

(3) lasers with contact stripes isolated by bounding p−n junction regions which are reversed biased during laser operation.

© 1976 Optical Society of America