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Conferences > CLEO_AT > 2019 > JTu2A > JTu2A.82

Toward All MOCVD Grown InAs/GaAs Quantum Dot Laser on CMOS-compatible (001) Silicon

Lei Wang, Bei Shi, Hongwei Zhao, Simone Suran Brunelli, Bowen Song, Douglas C. Oakley, and Jonathan Klamkin

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Abstract

Indium arsenide quantum dots (QDs) are demonstrated on gallium arsenide on silicon templates by metalorganic chemical vapor deposition. The template threading dislocation density is only 9.5×106 cm−2 and the QDs are of high quality.

© 2019 The Author(s)

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