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Toward All MOCVD Grown InAs/GaAs Quantum Dot Laser on CMOS-compatible (001) Silicon

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Abstract

Indium arsenide quantum dots (QDs) are demonstrated on gallium arsenide on silicon templates by metalorganic chemical vapor deposition. The template threading dislocation density is only 9.5×106 cm−2 and the QDs are of high quality.

© 2019 The Author(s)

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