High Responsivity Amorphous Indium Zinc Oxide Photo Sensor For In-cell Fingerprint Identification

Yu-Chuan Chiu; Jia-Lin Huang; Yu-Han Chen; Kai-Jhih Gan; Dun-Bao Ruan; Chih-Chieh Hsu; Po-Tsun Liu

doi:10.1364/CLEO_AT.2022.AW1D.7

Conference on Lasers and Electro-Optics
Technical Digest Series (Optica Publishing Group, 2022),
paper AW1D.7
•https://doi.org/10.1364/CLEO_AT.2022.AW1D.7

High Responsivity Amorphous Indium Zinc Oxide Photo Sensor For In-cell Fingerprint Identification

Yu-Chuan Chiu, Jia-Lin Huang, Yu-Han Chen, Kai-Jhih Gan, Dun-Bao Ruan, Chih-Chieh Hsu, and Po-Tsun Liu

CLEO: Applications and Technology 2022

San Jose, California United States
15–20 May 2022
ISBN: 978-1-957171-05-0

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Virtual: Progress in LED and Lasers (AW1D)

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Y. Chiu, J. Huang, Y. Chen, K. Gan, D. Ruan, C. Hsu, and P. Liu, "High Responsivity Amorphous Indium Zinc Oxide Photo Sensor For In-cell Fingerprint Identification," in Conference on Lasers and Electro-Optics, Technical Digest Series (Optica Publishing Group, 2022), paper AW1D.7.

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Abstract

Amorphous InZnO material is chosen for a phototransistor sensing layer, respectively, with a completely compatible process integrated into in-cell embedded photo sensor architecture. The photo sensor exhibits a high optical responsivity (1720 A/W) and good signal to noise ratio (~10³) under the low blue light illumination.

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