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Interplay of strain and chemical ordering in GalnP for enhanced laser characteristics

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Abstract

It is important in semiconductor lasers to match the symmetry of the wavefunctions to the one-dimensional symmetry of the laser beam, with its clearly defined direction and polarisation. It is understood how this can be achieved by the use of built-in strain, but significant effects can also arise due to the chemical ordering of atoms in the crystal during growth. Even stronger effects arise due to the interplay of strain and chemical ordering.

© 1994 IEEE

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