Abstract

Over the last years silicon-germanium alloys have become a subject of considerable work. High quality SiGe single crystalline alloys can be formed over the entire composition range. The tunability of the physical, optical and electronic properties with the film stoichiometry and the compatibility with existing silicon-based technology has led to numerous application of these materials in optical fiber communications (light modulators), infrared detectors, solar cells, and band gap engineering of Si based microelectronic devices. Up to date research on Si_1-xGe_x alloys growth has been mainly focused on the use of molecular beam epitaxy, and chemical vapor deposition. While these techniques have demonstrated growth of device quality material, the optoelectronic technology has an increasing demand for higher integration. The reduction of the substrate temperatures, or of the processing times, are desirable in order to minimize impurity diffusion and to avoid junction destruction. In this context, laser annealing of Si_1-xGe_x alloys was early proposed to promote epitaxial regrowth of e-beam amorphous deposited films.

© 1996 IEEE