Abstract

Direct photoetching or ablation of some materials by pulsed ultraviolet excimer laser and the feasibility of using this for "dry" lithography in microelectronics now promotes wide research interesting. To date, most studies in this field focus on organic polymer. As a direct gap semiconductor, because of some unusual properties derived from its unique football- like molecular structure, C₆₀ material may cause a great influence on the development of semiconductor industry. In this paper, we studied the ablation characteristics of C₆₀ film irradiated by XeCl excimer laser in air and low vacuum. The ablation rate curve and ablation threshold in air were calculated. The physics in ultraviolet photoablation of C₆₀film and the effect of O₂ gas was analyzed through comparing the result in air low vacuum. The results of experiment are shown in Fig 1.

© 1996 IEEE