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Conferences > CLEO_Europe > 1996 > CThI > CThI13

High Speed Uncooled Photoconductive Detectors Based on Doped Thin Insb/Al2o3 Layers

A.G. Padalko, V.YA. Shevchenko, O.N. Pashkova, and F.S. Perry

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Abstract

Opportunity of standard photolithography using has led to creation of photoconductive detectors with labyrinth layout, which have an impedance up to tens of kOhms at 300 K, with some advantages under direct matching to preamplifier curcuits without transformers. So that doping is the .most important technique of photoelectric parameters improving of such type devices, the purpose of present work is understandable.

© 1996 IEEE

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