Abstract

InAs diode detectors are good for ~3 pm wavelength detection and promising to operate at high temperature (T). In order to decrease the dark current at high T, we have studied the I-V characteristics of the PIN (SI066) and PN (S1135) diodes, and concluded the dominant current mechanics at various T. The two diodes are grown on the InAs N-type substrates. The doping densities of the PIN diode are 3×10¹⁷ cm^-3 and 6.7×10¹⁶ cm^-3 for P and N types respectively, and the thickness of the intrinsic layer is 0.14µm. Those of the PN diode are 1 × 10¹⁶ cm^-3 and 1×10¹⁶ cm^-3. The mesa shape of the diodes is a circle with a radius of 150µm.

© 1996 IEEE