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Conferences > CLEO_Europe > 1996 > CTuG > CTuG3

The growth of Nd doped LaSc3(BO3)4 single crystals for diode pumped microchip lasers

B. Chai, Q. Ye, K. Petermann, and G. Huber

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Abstract

High efficiency diode pumped Nd-doped LaSc3(BO3)4 (LSB) microchip laser has been reported before. 1-4 Nd:LSB crystals offer unique properties of large absorption coefficient, broad absorption band (FWHM = 3 nm) and high Nd doping with little concentration quenching. It is ideal for diode pumped miniature lasers where high (> 15%) Nd doping is preferred.

© 1996 IEEE

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