High Power (55 W CW) Surface Emitting 0.8μm GaAlAs/GaAs Laser Diodes

C. Peyrot; E. Vassilakis; G. Marquebielie

doi:10.1364/CLEO_EUROPE.1996.CTuM2

Conference on Lasers and Electro-Optics Europe
Technical Digest Series (Optica Publishing Group, 1996),
paper CTuM2
•https://doi.org/10.1364/CLEO_EUROPE.1996.CTuM2

High Power (55 W CW) Surface Emitting 0.8μm GaAlAs/GaAs Laser Diodes

C. Peyrot, E. Vassilakis, and G. Marquebielie

The European Conference on Lasers and Electro-Optics 1996

Hamburg Germany
8–13 September 1996
ISBN:

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High Power Semiconductor Lasers (CTuM)

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C. Peyrot, E. Vassilakis, and G. Marquebielie, "High Power (55 W CW) Surface Emitting 0.8μm GaAlAs/GaAs Laser Diodes," in Conference on Lasers and Electro-Optics Europe, Technical Digest Series (Optica Publishing Group, 1996), paper CTuM2.

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Abstract

High power Monolithic Surface Emitting Laser sources operating at 808 nm are very Interesting tor applications such as high duty cycle (20 to 30%) or CW mode sources for pumping Nd: YAG rods or slabs because of their brightness (10° × 15°) and their high optical power density.

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