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Conferences > CLEO_Europe > 1996 > CWF > CWF7

Lateral Carrier Profile for Mesa-structured InGaAs/GaAs Lasers

M. S. Torre, I. Esquivias, K. Czotscher, S. Weisser, B. Romero, J. D. Ralston, E. Larkins, W. Benz, and J. Rosenzweig

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Abstract

Lateral carrier diffusion and carrier recombination at external surfaces are limiting mechanisms in the performance of laser devices with small lateral dimensions i e ultra-low threshold lasers, ultra hisgh-speed laser, and etched-pillar VCSEL's. Spatial effects also play an important role in the behaviour of broad-area high power lasers.

© 1996 IEEE

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