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The thin films of YAG (Y3Al5O12) and YAP (YAlO3) doped with Nd were prepared by pulsed laser deposition on sapphire (0001) and (1102) substrates and YAP (001) substrate from crystalline YAG target of 0.8 at% of Nd, and crystalline YAP targets of 0.74 at% of Nd, 0.80 at% of Nd and 0.90 at% of Nd concetrations. The substrate temperature Ts varied from 860°C to 1100°C and oxygen pressure po in the range from 8.5 × 10–3 Pa to 5.5 Pa. Energy density of KrF excimer laser beam was 3 - 4 J/cm2. Film thickness on sapphire substrates was between 6 µm and 11 µm and on YAP round 20 µm.
© 1998 IEEE
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