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Ti-diffusion in sapphire for active and passive waveguide devices

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Abstract

Interest in aluminium oxide as a material for integrated optic devices is increasing. Recent successes include the realisation of amplification in Er doped A12O3 waveguides deposited on Si/SiO2 substrate1 and miniature Ti:sapphire lasers in both epitaxially grown slab waveguides2 and thermally diffused channel waveguides3.

© 1998 IEEE

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