Abstract
The Cr4+:YAG laser, first reported in [1], is a unique laser source, tunable over an attractive for many applications wavelength range of 1.34-1.6 µm [2]. The diode-pumping of Cr4+-doped materials, however, remains a challenging task due to difficulties in growing of the crystals with high Cr4+concentration. The recently reported diode-pumped operation of Cr4+:forsterite and Cr4+:Ca2GeO4 required the ideal beam of the MOPA source [3] and no results on direct diode-pumping of any Cr4+-doped material with conventional diode arrays are known to us at the moment.
© 1998 IEEE
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