Add to BibSonomyAbstract
The back-gated metal-semiconductor-metal photodetector is a hybridisation of a metal-Semiconductor-metal Photodetector and a pin photodiode. Top contacts are made to two n-regions which are isolated by etching down to the intrinsic region. A third contact is made to the bottom p-region(see figure 1).
© 1998 IEEE
PDF ArticleMore Like This
The Role of Partial Illumination in Metal-Semiconductor-Metal Photodetectors (MSM-PD)
M. A. Hassan, A. J. Vickers, S. P. Wilson, and A. B. Walker
CTuI93 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 1998
Effect of a deep-level trap on hole transport in InAlAs/InGaAs metal-semiconductor-metal photodetectors
K. J. Lee, F. G. Johnson, Junghwan Kim, W. B. Johnson, and Chi H. Lee
CWH3 Conference on Lasers and Electro-Optics (CLEO:S&I) 1998
Detailed experimental and theoretical investigation and comparison of the cascadability of semiconductor optical amplifier gates and gain-clamped semiconductor optical amplifier gates
S. L. Danielsen, P. B. Hansen, D. Wolfson, B. Mikkelsen, K. E. Stubkjaer, J. Y. Emery, F. Pommereau, and M. Renaud
TuH2 Optical Fiber Communication Conference (OFC) 1998