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GaAs metal-semiconductor-metal photodetectors (MSM-PD) have shown great promise for optoelectronics integrated circuit applications, particularly in telecommunications, due to their high speed response, low dark current of 30pA leading to very low noise, and high quantum efficiencies of up to 90%. Their simple planar structure with a capacitance in the fF regime leads to extremely low RC times and large bandwidths (375GHz).
© 1998 IEEE
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