Abstract

Three different new Yb³⁺ doped crystalline silicates hosts: Yb:YSO (Y₂SiO₅); Yb:CAS (Ca₂Al₂SiO₇) and Yb:SYS (Sr₄Y(SiO₄)O) have been grown by the Czochralski process The melting point vary in the range 1580°C for the Yb:CAS until ≈ 2000°C for the Yb:YSO host First, low doping concentration is used to determine the usual Yb³⁺ spectroscopic and laser parameters: absorption and emission cross sections, lifetime values and gain curves. The crystal field splitting of the fundamental ²F_7/2 energy level is determined through the measurements of low temperature absorption and emission spectra β_min values, which represent the minimal population inversion required for the laser oscillation, are very low for the Yb:CAS and Yb:YSO materials Second, for laser investigation, the Yb³⁺ concentration is chosen around 5% and 1 mm thick laser rods are cut and laser quality polished. For the preliminary experiments, the laser rods were not AR coated.

© 2000 IEEE