Abstract

Photonic crystals (PhCs) composed of active materials allow the creation of zero-threshold lasers utilizing the photonic bandgap effect in the stopband and have been one of the major device applications since the concept of PhCs was proposed [1]. Furthermore, PhCs have strong anisotropy and dispersion and are applicable to various devices also in the passband. Autocloning is used to automatically shape 2D and 3D PhCs and is a practical technique for industry [2], and it is important to combine the process and materials of autocloning with those of compound semiconductors. In this work, we developed a process to grow III-V compound semiconductor active layers selectively in the region surrounded by a-Si/SiO₂ 3D PhCs on InP substrates and observed polarization dependence in the photoluminescence transmitted in the lateral direction in the PhCs.

© 2000 IEEE