Decay of 3d Element Internal Photoluminescence Transition in III-V Semiconductors

G. Guillot; C. Benjeddou; P. Leyral; A. Nouailhat

doi:10.1364/ICOL.1984.ThC15

International Conference on Luminescence - 1984
Technical Digest Series (Optica Publishing Group, 1984),
paper ThC15
•https://doi.org/10.1364/ICOL.1984.ThC15

Decay of 3d Element Internal Photoluminescence Transition in III-V Semiconductors

G. Guillot, C. Benjeddou, P. Leyral, and A. Nouailhat

International Conference on Luminescence 1984

Madison, Wisconsin United States
13–17 August 1984
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G. Guillot, C. Benjeddou, P. Leyral, and A. Nouailhat, "Decay of 3d Element Internal Photoluminescence Transition in III-V Semiconductors," in International Conference on Luminescence - 1984, Technical Digest Series (Optica Publishing Group, 1984), paper ThC15.

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Abstract

The decay processes of infrared emissions due to internal transitions after laser excitation have been studied systematically for the first time for several III-V semiconductors (GaAs, InP, GaP) doped with 3d ions (V, Cr, Fe and Co).

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