Abstract

Aluminium nitride ceramic (AIN) is a very attractive material for advanced technological applications. It has a heat conductivity (180 Wm^-1 K^-1) comparable to most conductive metals and much greater than typical ceramics at room temperature. Its high electrical resistivity ( 〉 10¹⁴ Ωcm), good dielectric strength, thermal expansion (5·10^-6 K^-1) closely match to silicon and lack of toxicity are ideal for microelectronic substrate applications. After a KrF excimer laser irradiation of AIN, the surface becomes electrical conductive. This effect could be interesting for a microelectronic application to produce small conductive lines in one individual operation.

© 2000 IEEE