Abstract

Semiconductor lasers (cw, 300K) have much potential for application in optical communications, gas detection, nonlinear optics… The development of compact, high repetition-rate, ultrashort-pulse, multi-wavelength laser sources is of particular interest for DWDM application. Diode-pumped vertical-external-cavity-surface-emitting-lasers (VECSEL) have generated high average powers with circular diffraction-limited output beams [1], and short pulse operation [2]. In this type of semiconductor laser, which is simple to manufacture, both the beam quality limitations of edge-emitting diode lasers and the power restrictions of electrically pumped surface-emitting lasers are overcome. The laser mode area on the chip can be ~10⁴ times larger, offering scope for the generation of high average power and large pulse energy.

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