Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • 2021 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference
  • OSA Technical Digest (Optica Publishing Group, 2021),
  • paper cb_6_2

InGaAs Nano-ridge Laser Emitting in the Telecom O-band Monolithically Grown on a 300 mm Si Wafer

Not Accessible

Your library or personal account may give you access

Abstract

Nano-ridge engineering is a novel approach for the monolithic integration of active components on the Silicon Photonics platform. By demonstrating lasing from a InGaAs nano-ridge we further extend its reach to telecom applications.

© 2021 IEEE

PDF Article
More Like This
Monolithic InGaAs/GaAs multi-QWs DFB nano-ridge laser directly grown on 300 mm Si Wafer

Yuting Shi, Zhechao Wang, Joris Van Campenhout, Marianna Pantouvaki, Bernardette Kunert, and Dries Van Thourhout
ITu2A.2 Integrated Photonics Research, Silicon and Nanophotonics (IPR) 2017

Loss-Coupled DFB Nano-ridge Laser Monolithically Grown on a Standard 300-mm Si Wafer

Yuting Shi, Marina Baryshnikova, Yves Mols, Marianna Pantouvaki, Joris Van Campenhout, Bernardette Kunert, and Dries Van Thourhout
cb_1_4 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2019

Low-optical-pumping-threshold InGaAs/GaAs Nano-ridge Laser Monolithically Grown on 300 mm Silicon Substrate

Z. Ouyang, E. M. B. Fahmy, D. Colucci, A. A. Yimam, B. Kunert, and D. Van Thourhout
STh3H.3 CLEO: Science and Innovations (CLEO:S&I) 2023

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.