Abstract
Amorphous-silicon-grating-on-top DFB-InGaAs/GaAs-laser directly grown on silicon substrate by nano-ridge engineering technique exhibits 2.5 kW/cm2 lasing threshold, 10 times smaller than nano-ridge laser with etched grating, due to avoiding introducing carrier loss path at GaAs-air surface.
© 2023 The Author(s)
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