Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Low-optical-pumping-threshold InGaAs/GaAs Nano-ridge Laser Monolithically Grown on 300 mm Silicon Substrate

Not Accessible

Your library or personal account may give you access

Abstract

Amorphous-silicon-grating-on-top DFB-InGaAs/GaAs-laser directly grown on silicon substrate by nano-ridge engineering technique exhibits 2.5 kW/cm2 lasing threshold, 10 times smaller than nano-ridge laser with etched grating, due to avoiding introducing carrier loss path at GaAs-air surface.

© 2023 The Author(s)

PDF Article
More Like This
Monolithic InGaAs/GaAs multi-QWs DFB nano-ridge laser directly grown on 300 mm Si Wafer

Yuting Shi, Zhechao Wang, Joris Van Campenhout, Marianna Pantouvaki, Bernardette Kunert, and Dries Van Thourhout
ITu2A.2 Integrated Photonics Research, Silicon and Nanophotonics (IPR) 2017

InGaAs Nano-ridge Laser Emitting in the Telecom O-band Monolithically Grown on a 300 mm Si Wafer

Davide Colucci, Yuting Shi, Marina Baryshnikova, Yves Mols, Muhammad Muneeb, Yannick De Koninck, Marianna Pantouvaki, Joris Van Campenhout, Bernardette Kunert, and Dries Van Thourhout
cb_6_2 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2021

Loss-Coupled DFB Nano-ridge Laser Monolithically Grown on a Standard 300-mm Si Wafer

Yuting Shi, Marina Baryshnikova, Yves Mols, Marianna Pantouvaki, Joris Van Campenhout, Bernardette Kunert, and Dries Van Thourhout
cb_1_4 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2019

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.