Abstract

3D fabrication of semiconductor devices is important for numerous advanced applications from integrated microelectronics/photonics to micro-electro-mechanical systems (MEMS). Direct laser writing creates a promising alternative to lithographic methods which can require tedious steps. This relies on the possibility to penetrate inside the materials with ultrashort laser pulses in the infrared region of the spectrum to precisely induce micro/nano-scale structures. However, recent research [3]. Accordingly, there is a strong motivation to monitor and optimize the applied laser conditions inside semiconductors to achieve high-quality 3D fabrication.

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