Numerical study of laser excitation in Silicon using Three-Temperature model

Prachi Venkat; Tomohito Otobe

doi:10.1364/CLEO_AT.2022.JTh3B.9

Conference on Lasers and Electro-Optics
Technical Digest Series (Optica Publishing Group, 2022),
paper JTh3B.9
•https://doi.org/10.1364/CLEO_AT.2022.JTh3B.9

Numerical study of laser excitation in Silicon using Three-Temperature model

Prachi Venkat and Tomohito Otobe

CLEO: QELS_Fundamental Science 2022

San Jose, California United States
15–20 May 2022
ISBN: 978-1-957171-05-0

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Joint Poster Session III-B (Virtual) (JTh3B)

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P. Venkat and T. Otobe, "Numerical study of laser excitation in Silicon using Three-Temperature model," in Conference on Lasers and Electro-Optics, Technical Digest Series (Optica Publishing Group, 2022), paper JTh3B.9.

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Abstract

Laser excitation in Silicon is studied using a new Three-Temperature model. The thresholds for partial melting and electron emission show good agreement with experimental results. Comparison with two-temperature model is also done.

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