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Conferences > CLEO_SI > 2023 > STh3H > STh3H.2

Large-area InP laterally grown on SOI for Micro-lasers and Fabry-Perot lasers

Jie Li, Ying Xue, Ke Xu, Zengshan Xing, Kam Sing Wong, and Kei May Lau

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Abstract

Tuning the initial growth conditions of the low-temperature-InP (LT-InP) nucleation layer, we grew large-area InP laterally on SOI wafers using lateral aspect ratio trapping (LART) with high crystalline quality, on which small micro-lasers and large Fabry-Perot (FP) lasers with low lasing thresholds were demonstrated.

© 2023 The Author(s)

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