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Substrate-Independent Technique of III-V Heterogeneous Integration of Focal Plane Arrays and Lasers

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Abstract

We report on a two-step technique for post-bond III-V substrate removal involving precision mechanical milling and selective chemical etching. We show results on GaAs, GaSb, InP, and InAs substrates and from mm-scale chips to wafers.

© 2023 The Author(s)

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