Spectral Characteristic of Diamond-Silicon Sandwich Structures of Photodiode, Photoconductor and Misfet

V.V. Tokiy; V.I. Timchenko; V.A. Soroka; N. Tokiy; B.V. Spitsyn; L.L. Bouilov

Applications of Diamond Films and Related Materials: Third International Conference
Technical Digest Series (Optica Publishing Group, 1995),
paper DEDS149

Spectral Characteristic of Diamond-Silicon Sandwich Structures of Photodiode, Photoconductor and Misfet

V.V. Tokiy, V.I. Timchenko, V.A. Soroka, N. Tokiy, B.V. Spitsyn, and L.L. Bouilov

Applications of Diamond Films and Related Materials 1995

Gaithersburg, MD United States
21–24 August 1995
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Diamond–Electron Devices and Sensors (DEDS)

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V. V. Tokiy, V. I. Timchenko, V. A. Soroka, N. Tokiy, B. V. Spitsyn, and L. L. Bouilov, "Spectral Characteristic of Diamond-Silicon Sandwich Structures of Photodiode, Photoconductor and Misfet," in Applications of Diamond Films and Related Materials: Third International Conference, Technical Digest Series (Optica Publishing Group, 1995), paper DEDS149.

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Abstract

In the present work we considered the photoelectric properties of the undoped polycrystal diamond films on the (111)-oriented p-type Si substrate. The spectral characteristic of the photovoltaic structure indicates three the energy thresholds for carrier generation of 1 eV, 1.1 eV and 1.2 eV. We can connected the first two with electron emission and third with hole emission from Si to diamond.

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