Abstract

A ECR-CVD system was newly designed and applied on the growth of large scale plate-like single crystal diamond. The diamond plate was grown on the (200) surface of a heated silicon substrate in H₂-CO-O₂ mixing gas. Silicon wafers with (110) and (111) surface were also employed as a substrate. A plate like single crystal ten micro meter in size was grown on the (200) surface at 1123K. Top surface of the platelet crystal was very flat and was parallel to (111) plane, which was parallel to the (200) surface of the silicon substrate. Half peak width of the Raman scattering spectra was 2.6 cm⁻¹ showing low impunity content in the platelet crystal less than 1ppm for N and B.

© 1995 Optical Society of America