Nucleation and Growth of Oriented Diamond Films on Ni Substrates

P.C. Yang; T.J. Kistenmacher; D.A. Tucker; W. Liu; F.R. Sivazlian; S.P. Bozeman; B.R. Stoner; J.T. Prater; J.T. Glass; R.F. Davis

Applications of Diamond Films and Related Materials: Third International Conference
Technical Digest Series (Optica Publishing Group, 1995),
paper DGGC329

Nucleation and Growth of Oriented Diamond Films on Ni Substrates

P.C. Yang, T.J. Kistenmacher, D.A. Tucker, W. Liu, F.R. Sivazlian, S.P. Bozeman, B.R. Stoner, J.T. Prater, J.T. Glass, and R.F. Davis

Applications of Diamond Films and Related Materials 1995

Gaithersburg, MD United States
21–24 August 1995
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Diamond Growth and Growth Characterization (DGGC)

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P. C. Yang, T. J. Kistenmacher, D. A. Tucker, W. Liu, F. R. Sivazlian, S. P. Bozeman, B. R. Stoner, J. T. Prater, J. T. Glass, and R. F. Davis, "Nucleation and Growth of Oriented Diamond Films on Ni Substrates," in Applications of Diamond Films and Related Materials: Third International Conference, Technical Digest Series (Optica Publishing Group, 1995), paper DGGC329.

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Abstract

Oriented (100) and (111) polycrystalline diamond has been achieved without graphite formation. Nucleation is beleived to occur from a Ni-C-H molten surface layer on oriented, metastable, cubic Ni₄C previously nucleated on similarly oriented single crystal Ni substrates. The incorporation of the atomic H lowers the eutectic melting point of the Ni-C system from 1325°C to the 900-1000°C range and also promotes the nucleation of the Ni₄C. X-ray diffraction analysis revealed that the Ni₄C occurs only between the diamond particles and the Ni substrate.

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