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Conferences > DFM > 1995 > DGGC > DGGC343
  • Applications of Diamond Films and Related Materials: Third International Conference
  • Technical Digest Series (Optica Publishing Group, 1995),
  • paper DGGC343

Diamond Nucleation and Growth on Mirror-Polish Silicon Wafer Pretreated by Silicon Ion Implantation

Jie Yang, Xiaowei Su, Qijin Chen, and Zhangda Lin

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Abstract

Diamond films have been obtained by hot-filament chemical vapor deposition (HF-CVD) method on silicon wafer. The substrates were pre-implantated by silicon ion beam (the ion energy is 25keV, implantation dosage is 5X1015, 5X1016, and 2xl017 Si+/cm2). X-ray diffraction (XRD), scanning electron microscopy (SEM), Cross-sectional transmission electron microscopy (TEM), and Raman spectroscopy were used to characterize the structure of the synthesized films.

© 1995 Optical Society of America

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