Abstract

Si substrates were seeded with purified nanocrystal diamond particles about 5 nm in diameter synthesized by the implosion process. Ultra high growing particle densities of diamond more than 5×10¹¹cm⁻² achieved and continuous diamond films were formed uniformly in 10 min after deposition started by using conventional microwave plasma chemical vapor deposition (CVD) method. Well-faceted diamond films have been fabricated at 200°C on the Si substrate by the magneto-active microwave plasma CVD method.

© 1995 Optical Society of America