Abstract

B-doped high quality diamond epitaxial films have been obtained on high-pressure synthesized cBN crystals by dc glow discharge chemical vapor deposition (CVD). The deposition conditions and the orientation of cBN crystal are important to diamond oriented nucleation and epitaxial growth. The micro-Raman spectroscopy measurement indicates that the quality of the diamond film grown on cBN {100} surface is close to that of natural diamond. The scanning electron microscopy (SEM) observation shows that the epitaxial film has very smooth surface. The specific resistance of the B-doped epitaxial film is about 0.1 ohm·cm.