Abstract

A theoretical model has been developed to investigate transport phenomena and chemical kinetics in a rotating disk diamond chemical vapor deposition (CVD) reactor. The model combines mass, momentum and energy balances for the gas flow with detailed gas and surface kinetics for diamond formation. The model equations were solved numerically to determine gas-phase composition profiles and diamond film growth rates for hot-filament, dc arc-jet and chlorine-activated systems. The model was then used to investigate the benefits of injecting methane through the substrate of a dc arc-jet reactor. This process modification is predicted to increase the diamond growth rate by an order of magnitude.

© 1995 Optical Society of America