Abstract

Semiconductors and in particular AlGaAs, have proved to be optimum non-linear materials when operated below the half band gap. Large phase shifts have been observed, with a minimal nonlinear absorption. The large nonlinear refractive index found in AlGaAs can also be used to observe spatial solitons, at lower power levels that have previously been employed in CS₂ and glass waveguides.^1,2 AlGaAs is thus an ideal candidate for the study and implementation of devices, which utilise spatial solitons.³ Here we report on a device that employs spatial solitons for all-optical switching.⁴

© 1994 IEEE