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Optica Publishing Group
  • European Quantum Electronics Conference
  • Technical Digest Series (Optica Publishing Group, 1994),
  • paper QWD48

Temperature dependence of the excited-state absorption of Ni2+-doped MgF2 and Gd3Ga5O12 laser crystals

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Abstract

Ni2+-doped MgF2 is a well-known tunable laser in the near infrared.1 The tunability arises from the vibronical broadening of the infrared emission bandof crystals doped with Ni2+ in octahedral sites. The vibronically broadened opticals bands of Ni2+-doped crystals are described with the configurational coordinate model (Fig. 1). As can be seen from this model, the excited-state absorption (ESA) transition 3T2(3F) → 3T1(3F) coincides with the long-wavelength edge of the infrared emission band 3T2(3F) →3A2(3F). ESA is an important loss mechanism for the infrared laser emission, because it originates from the same energy level. Also, it reduces the tuning range at long wavelengths.2 All known Ni2+ lasers require cooling. The aim of this work is to investigate whether this can be explained with the temperature dependence of the bandwidths: at low temperatures the optical bands are narrower, thus improving the conditions for laser operation, because the overlap of the emission band with the ESA band and also with the 3A2(3F)→3T2(3F) ground state absorption band (GSA) is reduced.

© 1994 IEEE

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