Abstract

Extraction and injection of electrons via a resonant-tunneling structure (RTS) can provide a fast heating of the electron gas in the active region of three-terminal semiconductor lasers [1,2]. Due to string dependence of the optical gain on the electron temperature this mechanism can be used for a high-speed control of laser generation. In this work the three-terminal lasers (with the structure schematically shown in figure) controlled by the voltage applied to the RTS affecting the electron extraction from the active region are considered theoretically. The physical origin of the electron gas heating is associated with the extraction of low energy electrons (cold electrons) from the active region via the RTS.

© 1996 IEEE