Abstract

Intervalley scattering in the conduction bands of GaAs and related compounds has recently been investigated by a large variety of experimental methods [1]. The understanding of the intervalley transfer of electrons between conduction-band minima is essential for the design of high-speed (opto)electronic and all-optical devices. At mid-IR wavelengths the electrons can be efficiently transferred between the conduction-band minima when one operates near the plasma frequency of a highly n-doped semiconductor, leading to the nonlinear modulation of the dielectric permittivity.

© 1998 IEEE